PART |
Description |
Maker |
IPB100N08S2L-07 IPP100N08S2L-07 SP0002-19052 SP000 |
100 A, 75 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB OptiMOS? Power-Transistor OptiMOS㈢ Power-Transistor OptiMOSPower-Transistor
|
Infineon Technologies AG
|
STB6NA80 4233 STB6NA80-1 STB6NA80T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR N-CHANNEL Power MOSFET N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
OM6414SP3 OM6415SP3 OM6413SP3 OM6416SP3 |
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 200V V(BR)DSS | 4A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 200伏五(巴西)直| 4A条(丁) TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 400V V(BR)DSS | 2.5A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 400V五(巴西)直| 2.5AI(四 TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 100V V(BR)DSS | 6A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 100V的五(巴西)直| 6A条(丁) TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 500V V(BR)DSS | 2A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 500V五(巴西)直|甲(丁)
|
Samwha Electronics International Rectifier, Corp.
|
BUZ100SL-4 |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28 20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http:// Siemens Semiconductor Group Infineon Technologies AG SIEMENS AG
|
IRFU3709 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 90A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 30V的五(巴西)直| 90A型(丁)|51AA HEXFET? Power MOSFET SMPS MOSFET
|
International Rectifier, Corp. IRF[International Rectifier]
|
BUZ72 BUZ72SMD |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=0.2 Ohm, 10A, NL SIPMOS Power Transistor SIPMOS Power Transistor
|
Infineon Technologies AG
|
IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB
|
IRF[International Rectifier] International Rectifier, Corp.
|
IPP042N03LG IPB042N03LG |
OptiMOS?? Power-Transistor IPB042N03LG OptiMOS? Power-Transistor 70 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Infineon Technologies AG
|
IXFX32N50Q IXFK30N50Q IXFK32N50Q IXFX30N50Q |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-264AA TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|32AI(D)|TO-247VAR
HIPERFET POWER MOSFETS Q-CLASS
|
IXYS[IXYS Corporation]
|
HUF76423S3S HUF76423P3 FN4708 HUF76423S3ST HUF7642 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 36A条(丁)|63AB N-Channel NexFET Power MOSFET 8-SON -55 to 150 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD HiPerFET Power MOSFETs Q-Class Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|